A much-delayed alog: I completed DC and RF calibration checks on both IMC WFS using the 980 nm AM laser. The conclusion is that the WFS work, by and large. For two segments of WFS_B, the readout is about 15% lower than expected. And for both WFS, segments (1, 2, 3, 4) in the DC outputs apparently correspond to segments (4, 3, 2, 1) in the RF outputs. Details below. Devices tested WFS_A: head S1300267 / demod S1001018 WFS_B: head S1300268 / demod S1001034 WFS interface chassis S1200441 AM laser source 4 mW nominal output 0.1 Vpp RF drive at 24.078473 MHz RF input calibration is 13 mW/V => RF power is 1.3 mW Calibration factors WFS PD responsivity at 980 nm is in the range 0.5-0.6 mA/mW WFS PD DC transimpedance is 1 V/mA WFS_A PD RF transimpedance is (0.38, 0.43, 0.37, 0.38) V/mA for segments (4, 3, 2, 1) WFS_B PD RF transimpedance is (0.46, 0.47, 0.40, 0.46) V/mA for segments (4, 3, 2, 1) WFS interface DC gain is 1 (gain setting = LOW) Gain through demod board is 5 V(dc)/V(rf) (front panel) or 10 V(dc)/V(rf) (differential output to ADC) ADC conversion is 1638 ct/V Results Colored as follows: up to 5% deviation 5-10% deviation 10-15% deviation)
Parameter | Measured WFS_A | Measured WFS_B | Expected value |
---|---|---|---|
DC SUM output (ct) | 3820 | 3760 | 3300-3900 (4 mW * 0.5 or 0.6 mA/mW * 1 V/mA * 1 * 1638 ct/V) |
Responsivity at 980 nm (mA/mW) | 0.58 | 0.57 | 0.5-0.6 |
DC SEG1 output (ct) | 940 | 470 | bigger than zero, smaller than the DC SUM |
DC SEG2 output (ct) | 800 | 840 | bigger than zero, smaller than the DC SUM |
DC SEG3 output (ct) | 1210 | 1200 | bigger than zero, smaller than the DC SUM |
DC SEG4 output (ct) | 870 | 1250 | bigger than zero, smaller than the DC SUM |
I/Q SEG1 output (V p-p) | 0.330 | 0.560 | A:0.330 B:0.570 (A: capture fraction 870/3820 * 1.3 mW * 0.58 mA/mW * 0.38 V/mA * 5) (B: capture fraction 1250/3760 * 1.3 mW * 0.57 mA/mW * 0.46 V/mA * 5) |
I/Q SEG2 output (V p-p) | 0.440 | 0.460 | A:0.440 B:0.470 (A: capture fraction 1210/3820 * 1.3 mW * 0.58 mA/mW * 0.37 V/mA * 5) (B: capture fraction 1200/3760 * 1.3 mW * 0.57 mA/mW * 0.40 V/mA * 5) |
I/Q SEG3 output (V p-p) | 0.320 | 0.340 | A:0.340 B:0.390 (A: capture fraction 800/3820 * 1.3 mW * 0.58 mA/mW * 0.43 V/mA * 5) (B: capture fraction 840/3760 * 1.3 mW * 0.57 mA/mW * 0.47 V/mA * 5) |
I/Q SEG4 output (V p-p) | 0.350 | 0.180 | A:0.350 B:0.210 (A: capture fraction 940/3820 * 1.3 mW * 0.58 mA/mW * 0.38 V/mA * 5) (B: capture fraction 470/3760 * 1.3 mW * 0.57 mA/mW * 0.46 V/mA * 5) |
I/Q SEG1 output (ct p-p) | 1040 | 1800 | A:1070 B:1860 (A: expected SEG1 Vpp * 2 * 1638 ct/V) (B: expected SEG1 Vpp * 2 * 1638 ct/V) |
I/Q SEG2 output (ct p-p) | 1400 | 1500 | A:1450 B:1550 (A: expected SEG2 Vpp * 2 * 1638 ct/V) (B: expected SEG2 Vpp * 2 * 1638 ct/V) |
I/Q SEG3 output (ct p-p) | 1000 | 1100 | A:1110 B:1270 (A: expected SEG3 Vpp * 2 * 1638 ct/V) (B: expected SEG3 Vpp * 2 * 1638 ct/V) |
I/Q SEG4 output (ct p-p) | 1120 | 600 | A:1150 B:700 (A: expected SEG4 Vpp * 2 * 1638 ct/V) (B: expected SEG4 Vpp * 2 * 1638 ct/V) |